The HS517R Omnipolar Hall effect sensor IC is fabricated from mixed signal CMOS technology. It
incorporates advanced chopper-stabilization techniques to provide accurate and stable magnetic switch
points.
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall
element and analog signal processing circuits.This serves to place the high current-cons uming portions of
the circuit into a “Sleep” mode. Periodically the device is “Awakened” by this internal logic and the
magnetic flux from the Hall element is evaluated against the predefined thresholds. If the flux density is
above or below the B OP/BRP thresholds then the output transistor is driven to change states
accordingly. While in the “Sleep” cycle the output transistor is latched in its previous state. The design
has been optimized for service in applications requiring extended operating lifetime in battery powered
systems.
The output transistor of the HS517R will be latched on (BOP) in the presence of a sufficiently
strong South or North magnetic field facing the marked side of the package. The output will be latched
off (BRP) in the absence of amagnetic field.It incorporates advanced chopper-stabilization techniques to
provide accurate and stable magnetic switch points.
Featrues
v CMOS output
v Micropower consumption for battery powered
applications
v Output switches with absolute value of North
or South pole from magnet
v
Operation down to 1.6V
v
High sensitivity for direct reed switch
replacement applications
v
Ultra Low power consumption at 3uA (Avg)
v
High ESD Protection, HMB > ±8KV( min )
Applications
v
Solid state switch
v
Handheld Wireless Handset Awake Switch
v
Lid close sensor for battery powered devices
v
Magnet proximity sensor for reed switch
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